Blank Cover Image

Thermal and Chemical Instability Between Iridium Gate Electrode and Ta2O5 Gate Dielectrics

Author(s):
Publication title:
Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
567
Pub. Year:
1999
Page(from):
489
Pub. info.:
Warrendale, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994744 [1558994742]
Language:
English
Call no.:
M23500/567
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Study of Thermal Stability of CVD Ta2O5/Si Interface

Mao, A. Y., Son, K. A., White, J. M., Kwong, D. L., Roberts, D. A., Vrtis, R. N.

MRS - Materials Research Society
7 Conference Proceedings Formation of High Quality Thin Stacked Oxynitride Gate Dielectrics by In-Situ Rapid Thermal Multiprocessing

Bhat, M., Cho, T.H., Yan, J., Han, L.K., Kwong, D.L.

Electrochemical Society
2 Conference Proceedings Ultrathin High-Quality Ta2O5 Gate Dielectrics Prepared by In Situ Rapid Thermal Processing

Luan, H. F., Lee, S. J., Lee, C. H., Mao, A. Y., Vrtis, R., Roberts, D., Kwong, D. L.

MRS - Materials Research Society
8 Conference Proceedings High-Quality Ultrathin CVD Si3N4 Gate Dielectrics Fabricated by Rapid Thermal Process

Song, S. C., Luan, H. F., Gardner, M., Fulford, J., Allen, M., Kwong, D. L.

MRS - Materials Research Society
3 Conference Proceedings N2O Oxidation Kinetics of Ultrathin Thermally Grown Silicon Nitride: An Angle Resolved X-ray Photoelectron Spectroscopy Study

Mao, A. Y., Lozano, J., White, J. M., Kwong, D. L.

MRS - Materials Research Society
9 Conference Proceedings Highly reliable CVD-stacked oxynitride gate dielectric fabricated by in-situ rapid thermal multiprocessing

Yan,J., Han,L.K., Kwong,D.-L.

SPIE-The International Society for Optical Engineering
4 Conference Proceedings Ultrathin TiO2 Gate Dielectric Formation by Annealing of Sputtered Ti on Nitrogen Passivated Si Substrates in Nitric Oxide Ambient

Luan, H. F., Mao, A. Y., Lee, S. J., Luo, T. Y., Kwong, D. L.

MRS - Materials Research Society
10 Conference Proceedings Metallorganic Chemical Vapor Deposition of Ir Films With Iridium Acetylacetonate and Carbonyl Precursors

Sun, Y-M., Endle, J., Smith, K., Ekerdt, J. G., Hance, R. L., Alluri, P., White, J. M.

MRS - Materials Research Society
5 Conference Proceedings ELECTRICAL CHARACTERISTICS OF ULTRATHIN STACKED NITRIDE/OXIDE GATE DIELECTRICS PREPARED BY RAPID THERMAL PROCESSING

Ting, W., Ahn, J., Kwong, D. L.

Materials Research Society
11 Conference Proceedings Interface Technology for Advanced Gate Dielectrics*

Niwa, M., Harada, Y., Eruguchi, K., Kwong, D.-L.

Electrochemical Society
6 Conference Proceedings N2O-Based Gate Dielectrics for ULSI Applications

Kim, J., Yoon, G.W., Lo, G.Q., Ahn, J., Kwong, D.L.

Electrochemical Society
12 Conference Proceedings Electrical and Chemical Properties of Ultrathin RT-MOCVD Grown Ti-Doped Ta2O5

Lee, S.J., Luan, H.F., Mao, A., Jeon, T.S., Lee, C.H., Vrtis, R., Roberts, D., Kwong, D.-L.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12