Relationship Between Interfacial Roughness and Dielectric Reliability for Silicon Oxynitride Gate Dielectrics Processed With Nitric Oxide
- Author(s):
Sapjeta, J. Green, M. L. Chang, J. P. Silverman, P. J. Sorsch, T. W. Weir, B. E. Gladden, W. Ma, Y. Sung, C. Y. Lennard, W. N. - Publication title:
- Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 567
- Pub. Year:
- 1999
- Page(from):
- 289
- Pub. info.:
- Warrendale, PA: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558994744 [1558994742]
- Language:
- English
- Call no.:
- M23500/567
- Type:
- Conference Proceedings
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