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Two-Band Tunneling Currents and Stress-Induced Leakage in Ultrathin SiO2 Films

Author(s):
Okhonin, S.
Ils, A.
Bouvet, D.
Fazan, P.
Guegan, G.
Deleonibus, S.
Martin, F.
2 more
Publication title:
Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
567
Pub. Year:
1999
Page(from):
253
Pub. info.:
Warrendale, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994744 [1558994742]
Language:
English
Call no.:
M23500/567
Type:
Conference Proceedings

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