The Effects of Interfacial Suboxide Transition Regions On Direct Tunneling in Oxide and Stacked Oxide-Nitride Gate Dielectrics

The Effects of Interfacial Suboxide Transition Regions On Direct Tunneling in Oxide and Stacked Oxide-Nitride Gate Dielectrics

Author(s):

Publication title:

Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

567

Pub. Year:

1999

Page(from):

241

Pub. info.:

Warrendale, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994744 [1558994742]

Language:

English

Call no.:

M23500/567

Type:

Conference Proceedings

Details

TDL ID:	ZA00020318
Series ID:	PA00000011
Conf. info. (Name):	Symposium on ultrathin SiO2 and high-K materials for ulsi gate dielectrics
Conf. info. (Number):	1999
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1999.04.05-1999.04.08

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