Preparation of a-Si:H and a-SiGe:H i-Layers for nip Solar Cells at High Deposition Rates Using a Very High Frequency Technique

Preparation of a-Si:H and a-SiGe:H i-Layers for nip Solar Cells at High Deposition Rates Using a Very High Frequency Technique

Author(s):

Publication title:

Amorphous and microcrystalline silicon technology - 1998 : symposium held April 14-17, 1998, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

507

Pub. Year:

1999

Page(from):

113

Pub. info.:

Warrendale: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994133 [1558994130]

Language:

English

Call no.:

M23500/507

Type:

Conference Proceedings

Details

TDL ID:	ZA00020313
Series ID:	PA00000011
Conf. info. (Name):	Symposium on amorphous and microcrystalline silicon technology
Conf. info. (Number):	1998
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1998.04.14-1998.04.17

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