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Effect of NH3/SiH4 Gas Ratios of Top Nitride Layer on Stability and Leakage in a-Si:H Thin-Film Transistors

Author(s):
Publication title:
Amorphous and microcrystalline silicon technology - 1998 : symposium held April 14-17, 1998, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
507
Pub. Year:
1999
Page(from):
73
Pub. info.:
Warrendale: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994133 [1558994130]
Language:
English
Call no.:
M23500/507
Type:
Conference Proceedings

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