Novel single-layer chemically amplified resist for 193-nm lithography
- Author(s):
- Choi,S.-J. ( Samsung Electronics Co.,Ltd. )
- Kang,Y.
- Jung,D.-W.
- Park,C.-G.
- Moon,J.-T.
- Publication title:
- Advances in resist technology and processing XIV : 10-12 March 1997, Santa Clara, California
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 3049
- Pub. Year:
- 1997
- Page(from):
- 104
- Page(to):
- 112
- Pub. info.:
- Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819424631 [0819424633]
- Language:
- English
- Call no.:
- P63600/3049
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Novel polymers for 193-nm single-layer resist based on cycloolefin polymers
SPIE - The International Society for Optical Engineering |
7
Conference Proceedings
Comparative evaluation of positive and negative chemically amplified resist characteristics for 90-nm-node photomask production
SPIE-The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
Society of Photo-optical Instrumentation Engineers |
4
Conference Proceedings
"Novel chemically amplified positive resist containing acetal-type crosslinker of poly(3,3'-dimethoxypropene) for 193-nm top surface imaging process"
SPIE-The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |
12
Conference Proceedings
Chemically amplified resists based on the norbornene copolymers with steroid derivatives
SPIE - The International Society of Optical Engineering |