Blank Cover Image

A Non-Destructive Technique for High Field Characterization of Gate Insulators in SiC MOS Capacitors

Author(s):
Publication title:
Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
Title of ser.:
Materials science forum
Ser. no.:
264-268
Pub. Year:
1998
Vol.:
Part1
Page(from):
665
Page(to):
668
Pub. info.:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497911 [0878497919]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Comparison of High Field Characteristics of SiO2 and AlN Gate Insulators in 6H SiC MOS Capacitors

Madangarli, V. P., Sudarshan, T. S., Tin, C. C.

MRS - Materials Research Society
7 Conference Proceedings SiC Epitaxial Growth on Carbon

Khlebnikov, I., Madangarli, V., Sudarshan, T. S.

MRS - Materials Research Society
2 Conference Proceedings Characterization of 4H-SiC MOS Capacitors by a Fast-Ramp Response Technique

Sudarshan, T. S., Madangarli, V. P., Gradinaru, G., Tin, C. C., Hu, R., Isaacs-Smith, T.

MRS - Materials Research Society
8 Conference Proceedings Comparison of Current - Voltage Characteristics of n - and p-Type 6H-SiC Schottky Diodes

Zhang, Q., Madangarli, V., Gao, Y., Sudarshan, T.S.

Materials Research Society
3 Conference Proceedings Rapid Anodic Oxidation of 6H-SiC

Khlebnikov,Y., Madangarli,V.P., Khan,M.A., Sudarshan,T.S.

Trans Tech Publications
9 Conference Proceedings Thick oxide layers on N and P SiC wafers by a depo-conversion technique

Zhang, Q., Madangarli, V., Khlebnikov, I., Soloviev, S., Sudarshan, T. S.

MRS-Materials Research Society
4 Conference Proceedings Thick Film SiC Epitaxy for 'Filling Up'Micropipes

Khlebnikov,I., Madangarli,V.P., Khan,M.A., Sudarshan,T.S.

Trans Tech Publications
10 Conference Proceedings The Response of High-Voltage 4H-SiC p-n Junction Diodes to Different Edge-Termination Techniques

Oder, T. N., Tin, C. C., Williams, J. R., Isaacs-Smith, T., Madangarli, V., Sudarshan, T. S.

MRS - Materials Research Society
5 Conference Proceedings Non-Destructive SiC Wafer Evaluation Based on an Optical Stress Technique

Ma, X., Parker, M., Ma, Y., Kubota, T., Sudarshan, T.S.

Trans Tech Publications
11 Conference Proceedings Room Temperature Photoluminescence from 4H-SiC Epilayers: Non-Destructive Estimation of In-Grown Stacking Fault Density

S.U. Omar, H.Z. Song, T.S. Sudarshan, M.V.S. Chandrashekhar

Trans Tech Publications
6 Conference Proceedings A Technique for Rapid Thick Film SiC Epitaxial Growth

Khlebnikov, I., Sudarshan, T. S., Madangarli, V., Capano, M. A.

MRS - Materials Research Society
12 Conference Proceedings Lateral Current Spreading in SiC Schottky Diodes using Field-Plate Edge Termination

Zhang, Q., Madangarli, V., Tarplee, M., Sudarshan, T. S.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12