On the Identification of an Al Related Deep Centre in 4H-SiC-Self-Compensation in SiC?
- Author(s):
- Publication title:
- Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
- Title of ser.:
- Materials science forum
- Ser. no.:
- 264-268
- Pub. Year:
- 1998
- Vol.:
- Part1
- Page(from):
- 591
- Page(to):
- 594
- Pub. info.:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497911 [0878497919]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
7
Conference Proceedings
High-frequency EPR studies of shallow and deep boron acceptors in 6H-SiC.(Invited)
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
5
Conference Proceedings
Identification of Iron and Nickel in 6H-SiC by Electron Paramagnetic Resonance
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |