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Deep Levels in SiC:V by High Temperature Transport Measurements

Author(s):
Mitchel,W.C.
Perrin,R.
Goldstein,J.
Roth,M.
Ahoujja,M.
Smith,S.R.
Evwaraye,A.O.
Solomon,J.S.
Landis,G.
Jenny,J.
Hobgood,H.McD.
Augustine,G.
Balakrishna,V.
8 more
Publication title:
Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
Title of ser.:
Materials science forum
Ser. no.:
264-268
Pub. date:
1998
Vol.:
Part1
Page(from):
545
Page(to):
548
Pub. info.:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497911 [0878497919]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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