Changes in the Exciton-Related Photoluminescence of 4H- and 6H-SiC Induced by Uniaxial Stress
- Author(s):
Ivanov,I.G. Lindefelt,U. Henry,A. Egilsson,T. Kordina,O. Janzen,E. - Publication title:
- Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
- Title of ser.:
- Materials science forum
- Ser. no.:
- 264-268
- Pub. Year:
- 1998
- Vol.:
- Part1
- Page(from):
- 489
- Page(to):
- 492
- Pub. info.:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497911 [0878497919]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Some Aspects of the Photoluminescence and Raman Spectroscopy of(1010)-and(1120)-Oriented 4H and 6H Silicon Carbide
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
8
Conference Proceedings
Photoluminescence Excitation Spectroscopy on the Donor-Acceptor Pair Luminescence in 4H and 6H SiC
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
5
Conference Proceedings
Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC
Trans Tech Publications |
11
Conference Proceedings
Donor-Acceptor pair Luminescence of Phosphorus-Aluminum and Nitrogen-Aluminum Pairs in 4H SiC
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |