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Gas Source Molecular Beam Epitaxial Growth of 3C-SiC on Si with Heterointerface Modification by a Si-C-Ge Ternary System

Author(s):
Publication title:
Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
Title of ser.:
Materials science forum
Ser. no.:
264-268
Pub. date:
1998
Vol.:
Part1
Page(from):
235
Page(to):
238
Pub. info.:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497911 [0878497919]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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