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The Mechanism of Void Formation in the Growth of 3C-SiC Thin Film in Si Substrate

Author(s):
Se,Y.H.
Kim,K.C.
Shim,H.W.
Nahm,K.S.
Suh,E.-K.
Lee,H.J.
Hwang,Y.C.
Kim,D.-K.
Lee,B.-T.
4 more
Publication title:
Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
Title of ser.:
Materials science forum
Ser. no.:
264-268
Pub. date:
1998
Vol.:
Part1
Page(from):
199
Page(to):
202
Pub. info.:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497911 [0878497919]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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