Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC
- Author(s):
- Publication title:
- Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
- Title of ser.:
- Materials science forum
- Ser. no.:
- 264-268
- Pub. Year:
- 1998
- Vol.:
- Part1
- Page(from):
- 115
- Page(to):
- 118
- Pub. info.:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497911 [0878497919]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
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