Carrier Concentration Saturation in n Type AlxGa1-xAs
- Author(s):
- Publication title:
- Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995
- Title of ser.:
- Materials science forum
- Ser. no.:
- 196-201
- Pub. Year:
- 1995
- Pt.:
- 1
- Page(from):
- 279
- Page(to):
- 283
- Pub. info.:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497164 [0878497161]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
Electrochemical Society |
Electrochemical Society |
MRS - Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
4
Conference Proceedings
Analysis of optical gain of GalnNAs/GaAs compressive strained quantum well lasers
SPIE-The International Society for Optical Engineering |
10
Conference Proceedings
Comparative investigation of high-resolution transmission electron microscopy and Fourier transform infrared spectroscopy for GaN films on sapphire substrate
SPIE - The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
11
Conference Proceedings
Effect of Annealing on GaAs:C, AlxGa1-xAs:C, and AlAs: Grown by Metalorganic Molecular Beam Epitaxy
Electrochemical Society |
6
Conference Proceedings
Decay kinetics of growth-iuduced alignment of the first neighbor shell of CAs in AlxGa1-xAs
Trans Tech Publications |
12
Conference Proceedings
Comparison of the optical gain of wurtzite GaN/AIGaN quantum well lasers grown on (0001)-and (1010)-oriented substrates
SPIE-The International Society for Optical Engineering |