Free Electrons and Resonant Donor State in Gallium Nitride
- Author(s):
Perlin,P. Suski,T. Teisseyre,H. Leszczynski,M. Grzegory,I. Jun,J. Bockowski,M. Porowski,S. Boguslawski,P. Bernholc,J. Moustakas,T.D. - Publication title:
- Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995
- Title of ser.:
- Materials science forum
- Ser. no.:
- 196-201
- Pub. Year:
- 1995
- Pt.:
- 1
- Page(from):
- 23
- Page(to):
- 24
- Pub. info.:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497164 [0878497161]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Electrochemical Society |
7
Conference Proceedings
Doping, Activation of Impurities, and Defect Annihilation in GaN by High Pressure Annealing
MRS - Materials Research Society |
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |
Trans Tech Publications |
Trans Tech Publications |
Kluwer Academic Publishers |
SPIE-The International Society for Optical Engineering |
MRS - Materials Research Society |
MRS - Materials Research Society |
6
Conference Proceedings
Light Emitters Fabricated on Bulk GaN Substrates: Challenges and Achievements
Materials Research Society |
12
Conference Proceedings
Coexistence of Shallow and Localized Donor Centers in Bulk GaN Crystals Studied by High-Pressure Raman Spectroscopy
MRS - Materials Research Society |