Photoexcitation of Defects Related to B in GaAs
- Author(s):
- Publication title:
- Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993
- Title of ser.:
- Materials science forum
- Ser. no.:
- 143-147
- Pub. Year:
- 1994
- Vol.:
- Pt.2
- Page(from):
- 1281
- Page(to):
- 1285
- Pub. info.:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878496716 [0878496718]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
7
Conference Proceedings
< 100 >and< 111 >configurations of iron-acceptor pairs in silicon related to stable and metastable states
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
3
Conference Proceedings
INVESTIGATION OF MIDGAP DEFECTS IN GaAs INDUCED BY HEAT-TREATMENT (EL2), ELECTRON-IRRADIATION AND PLASTIC DEFORMATION
Materials Research Society |
9
Conference Proceedings
Me0tastability and Negative-U Properties for Hydrogen-Related Radiation-Induced Defect in Silicon
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
6
Conference Proceedings
ENHANCEMENT OF LONG-WAVELENGTH PHOTOLUMINESCENCE DUE TO HEAT-TREATMENT IN Si-DOPED GaAs
Materials Research Society |
Trans Tech Publications |