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Vacancy Related Metastable Defects in III-V Semiconductors-A Study of the EL2 and DX Center by Positron Annihilation,Photoconductivity and Infrared Spectroscopy

Author(s):
Krause-Rehberg,R.
Polity,A.
Drost,Th.
Roos,G.
Pensl,G.
Volm,D.
Meyer,B.K.
2 more
Publication title:
Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993
Title of ser.:
Materials science forum
Ser. no.:
143-147
Pub. date:
1994
Vol.:
Pt.2
Page(from):
1099
Page(to):
1104
Pub. info.:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496716 [0878496718]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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