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The Assignment of the 78/2O3meV Double Acceptor in GaAs to BAS Impurity Antisite Centers

Author(s):
Newman,R.C.
Davidson,B.R.
Addinall,R.
Murray,R.
Emmert,J.W.
Wagner,J.
Gotz,W.
Roos,G.
Pensl,G.
4 more
Publication title:
Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993
Title of ser.:
Materials science forum
Ser. no.:
143-147
Pub. date:
1994
Vol.:
Pt.1
Page(from):
229
Page(to):
234
Pub. info.:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496716 [0878496718]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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