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An investrgatlon of the 78/2O3 meV double accep-tor in GaAs includmg the effects of hydrogen pas-sivation

Author(s):
Addinall,R
Newman,RC
Gotz,W
Roos,G
Pensl,G
Hope,DA
1 more
Publication title:
Shallow impurities in semiconductors : proceedings of the Fourth International Conference on Shallow Impurities in Semiconductors, King's College London, 31 July to 2 August 1990
Title of ser.:
Materials science forum
Ser. no.:
65-66
Pub. date:
1991
Page(from):
175
Page(to):
180
Pub. info.:
Aedermannsdorf: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496198 [087849619X]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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