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Epitaxial growth of gamma-al2O3 insulator films on Si by molecular beam epitaxy using an Al solid source and N2O gas

Author(s):
  • Wado, H. ( Department of Electrical and Electronic Engineering, Toyohashi University of Technology )
  • Shimizu, T. ( Department of Electrical and Electronic Engineering, Toyohashi University of Technology )
  • Ohtani, K. ( Department of Electrical and Electronic Engineering, Toyohashi University of Technology )
  • Jung, Y.C. ( Department of Electrical and Electronic Engineering, Toyohashi University of Technology )
  • Ishida, M. ( Department of Electrical and Electronic Engineering, Toyohashi University of Technology )
Publication title:
Epitaxial oxide thin films II : symposium held November 26-30, 1995, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
401
Pub. date:
1996
Page(from):
39
Page(to):
44
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558993044 [1558993045]
Language:
English
Call no.:
M23500/401
Type:
Conference Proceedings

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