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Recombination at Dislocations in Silicon and Gallium Arsenide

Author(s):
Publication title:
Point and extended defects in semiconductors
Title of ser.:
NATO ASI series. Series B, Physics
Ser. no.:
202
Pub. Year:
1989
Page(from):
243
Page(to):
256
Pages:
14
Pub. info.:
New York: Plenum Press
ISBN:
9780306433368 [0306433367]
Language:
English
Call no.:
N11479/202
Type:
Conference Proceedings

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