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Effect of annealing on arsenic activation and device performance in mid-infrared HgCdTe on silicon grown by MBE

Author(s):
Publication title:
Photodetectors : materials and devices V : 26-28 January 2000, San Jose, California
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3948
Pub. Year:
2000
Page(from):
63
Page(to):
72
Pub. info.:
Bellingham, Wash., USA: SPIE - The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819435651 [0819435651]
Language:
English
Call no.:
P63600/3948
Type:
Conference Proceedings

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