Native oxided AlAs current blocking layer for AlGaInP high-brightness light-emitting diodes

Native oxided AlAs current blocking layer for AlGaInP high-brightness light-emitting diodes

Author(s):

Wang,G. ( Institute of Semiconductors )

Publication title:

Light-emitting diodes : research, manufacturing, and applications IV : 26-27 January 2000, San Jose, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3938

Pub. Year:

2000

Page(from):

154

Page(to):

159

Pub. info.:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819435552 [0819435554]

Language:

English

Call no.:

P63600/3938

Type:

Conference Proceedings

Details

TDL ID:	ZA00019951
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Light-Emitting Diodes : Conference
Conf. info. (Number):	2000 : 4th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2000.01.26-200.01.27

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