A NOVEL APPROACH FOR THE PRODUCTION OF LOW DISLOCATION RELAXED SiGe MATERIAL

A NOVEL APPROACH FOR THE PRODUCTION OF LOW DISLOCATION RELAXED SiGe MATERIAL

Author(s):

Publication title:

Defect-interface interactions : symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

319

Pub. Year:

1994

Page(from):

141

Pub. info.:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992184 [1558992189]

Language:

English

Call no.:

M23500/319

Type:

Conference Proceedings

Details

TDL ID:	ZA00019852
Series ID:	PA00000011
Conf. info. (Name):	Symposium on defect-interface interactions
Conf. info. (Number):	1993
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1993.11.29-1993.12.02

Similar Items:

1 Conference Proceedings NUCLEATION OF DISLOCATIONS IN SiGe LAYERS Mooney, P. M., Legoues, F. K., Chu, J. O. MRS - Materials Research Society	7 Conference Proceedings Relaxed SiGe Layers With High Ge Content by Compliant Substrates Yin, H., Peterson, R. L., Hobart, K. D., Shieh, S. R., Duffy, T. S., Sturm, J. C. Materials Research Society
2 Conference Proceedings THE MECHANISM OF OXIDATION OF SiGe LeGoues, F. K., Rosenberg, R., Nguyen, T., Meyerson, B. S. Materials Research Society	8 Conference Proceedings Relaxed SiGe Layers With High Ge Content by Compliant Substrates Yin, H., Peterson, R. L., Hobart, K. D., Shieh, S. R., Duffy, T. S., Sturm, J. C. Materials Research Society
3 Conference Proceedings THE MECHANISMS OF RELAXATION IN STRAINED LAYER GeSi/Si SUPERLATTICES DIFFUSION vs. DISLOCATION FORMATION LeGoues, F. K., Iyer, S. S., Tu, K. N., Delage, S. L. Materials Research Society	9 Conference Proceedings A NEW APPROACH FOR LOW DEFECT DENSITY GaAs ON PATTERNED Si SUBSTRATES BY MOCVD Karam, N. H., Haven, V., Ismail, K., Legoues, F., Carter, J., Smith, Henry I. Materials Research Society
4 Conference Proceedings Strain Relaxation of Ion-Implanted Strained Silicon on Relaxed SiGe Crosby, R.T., Jones, K.S., Law, M.E., Saavedra, A.F., Hansen, J.L., Larsen, A.N., Liu, J. Materials Research Society	10 Conference Proceedings Origin of Mosaic Structure in Relaxed Si1x-Gex Layers Mooney,P.M., LeGoues,F.K., Chu,J.O. Trans Tech Publications
5 Conference Proceedings THE SYNTHESIS AND STABILITY OF Si1-y Cy ALLOYS AND STRAINED LAYER SUPERLATTICES Iyer, S.S., Eberl, K., Goorsky, M.S., Legoues, F.K., Cardone, F., Ek, B.A. Materials Research Society	11 Conference Proceedings On the mechanism of the Smart CutTM layer transfer in relaxed SiGe Nguyen, P., Aulnette, C., Guiot, E., Daval, N., Bourdelle K.K., Cayrefourcq, I., Deguet, C., Sartori, S., Tauzin, A., … Electrochemical Society
6 Conference Proceedings "Si1-x-yGexCy Growth and Properties of the Ternary System" Powell R. A., Eberl K., Ek A. B., Iyer S. S. Kluwer Academic Publishers	12 Conference Proceedings 63 Thermal Stability of a Novel Graded Layer for Relaxed SiGe/Si Heteroepitaxy Wong, L.H., Wong, C.C., Ferraris, C., White, T.J., Liu, J.P., Chan, L., Sohn, O.K., Hsia, L. C. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12