Blank Cover Image

The Future of Silicide for CMOS Contacts

Author(s):
Publication title:
Advanced interconnects and contacts : symposium held April 5-7, 1999, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
564
Pub. Year:
1999
Page(from):
35
Pub. info.:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994713 [1558994718]
Language:
English
Call no.:
M23500/564
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings In Situ Analysis of the Formation of Thin TiSi2 (<50 nm) Contacts in Submicron CMOS Structures During Rapid Thermal Annealing

Clevenger, L. A., Cabral, C., Jr, Roy, R. A., Lavoie, C., Viswanathan, R., Saenger, K. L., Jordan-Sweet, J., Morales, …

MRS - Materials Research Society
7 Conference Proceedings Is Selective CVD an Improvement for the Titanium Silicide Process in Sub-Quarter Micron Technology? A Phase Formation Study Using X-ray Diffracion

Roy, Ronnen, Cabral, Cryil, Jr., Lavoie, Christian, Jordan-Sweet, Jean, Viswanathan, R., Ozturk, Mehmet, Fang, Hua, …

MRS - Materials Research Society
2 Conference Proceedings A Self-Aligned Silicide Process Utilizing Ion Implants For Reduced Silicon Consumption And Control Of The Silicide Formation Temperature

Cohen, G.M., Cabral, C., Jr., Lavoie, C., Solomon, P.M., Guarini, K.W., Chan, K.K., Roy, R.A.

Materials Research Society
8 Conference Proceedings In-situ Studies of Silicide Formation in Ti-Ta Bilayer Thin Films on Poly-Si

Ozcan, A.S., Ludwig K.F., Jr., Lavoie, C., Cabral, C., Jr., Harper, J.M.E.

Materials Research Society
3 Conference Proceedings Dependence of Crystallographic Texture of C54 TiSi2 on Thickness and Linewidth in Submicron CMOS Structures

Svilan, V., Rodbell, K. P., Clevenger, L. A., Cabral, C., Jr., Roy, R. A., Lavoie, C., Jordan-Sweet, J., Harper, J. M. …

MRS - Materials Research Society
9 Conference Proceedings Challenges for Integration of Source-Drain Contacts into Emerging Future Generation CMOS Devices

Roy, R.A.

Electrochemical Society
4 Conference Proceedings A Self-Aligned Silicide Process for Thin Silicon-on-Insulator MOSFETs and Bulk MOSFETs With Shallow Junctions

Cohen, G.M., Cabral, C., Jr., Lavoie, C., Solomon, P.M., Guarini, K.W., Chan, K.K., Roy, R.A.

Materials Research Society
10 Conference Proceedings Light Scattering Measurement of Surface Topography During Formation of Titanium Silicide

Lavoie, C., Cabral, C., Jr., Clevenger, L. A., Harper, J. M. E., Jordan-Sweet, J., Saenger, K. L., Doany, F.

MRS - Materials Research Society
5 Conference Proceedings Surface Roughening During Titanium Silicide Formation: A Comparison Between Si(100) and Poly-Si Substrates

Lavoie, C., Martel, R., Cabral, C., Jr., Clevenger, L. A., Harper, J. M. E.

MRS - Materials Research Society
11 Conference Proceedings Material and Integration Issues for Rare Earth Silicides as Gate and Diffusion Contacts in Advanced CMOS Technologies

C.P. D'Emic, K. Ohuchi, C. Murray, C. Lavoie, C. Scerbo

Electrochemical Society
6 Conference Proceedings Is Selective CVD an Improvement for the Titanium Silicide Process in Sub-Quarter Micron Technology? A Phase Formation Study Using X-ray Diffraction

Roy, Ronnen, Cabral, Cryil, Jr., Lavoie, Christian, Jordan-Sweet, Jean, Viswanathan, R., Ozturk, Mehmet, Fang, Hua, …

MRS - Materials Research Society
12 Conference Proceedings A Kinetic Study of the C49 to C54 Conversion in TiSi2 Using Electrical Resistivity Measurements on Single Sub-Micron Lines

Saenger, K. L., Cabral, C., Jr, Clevenger, L. A., Roy, R. A.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12