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Uniformity and Performance Characterization of GaN p-i-n Photodetectors Fabricated From 3-Inch Epitaxy

Author(s):
Hickman, R., II.
Klaassen, J. J.
Hove, J. M. Van
Wowchak, A. M.
Polley, C.
Rosamond, M. F.
Chow, P. P.
2 more
Publication title:
GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
537
Pub. date:
1999
Page(from):
G7.6.1
Pub. info.:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994430 [1558994432]
Language:
English
Call no.:
M23500/537
Type:
Conference Proceedings

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