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A Critical Comparison Between MOVPE and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications

Author(s):
Johnson, M. A. L.
Yu, Z.
Brown, J. D.
Koeck, F. A.
El-Masry, N. A.
Kong, H. S.
Edmond, J. A.
Cook, J. W., Jr.
Schetzina, J. F.
4 more
Publication title:
GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
537
Pub. Year:
1999
Page(from):
G5.10.1
Pub. info.:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994430 [1558994432]
Language:
English
Call no.:
M23500/537
Type:
Conference Proceedings

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