Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVD

Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVD

Author(s):

Xie, Z. Y.

Publication title:

GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

537

Pub. Year:

1999

Page(from):

G3.39.1

Pub. info.:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994430 [1558994432]

Language:

English

Call no.:

M23500/537

Type:

Conference Proceedings

Details

TDL ID:	ZA00019847
Series ID:	PA00000011
Conf. info. (Name):	Symposium on GaN and related alloys
Conf. info. (Number):	1998
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1998.11.30-1998.12.04

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