Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVD
- Author(s):
Elsner, J. Frauenheim, Th. Haugk, M. Gutierrez, R. Jones, R. Heggie, M. I. - Publication title:
- GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 537
- Pub. Year:
- 1999
- Page(from):
- G3.29.1
- Pub. info.:
- Warrendale, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558994430 [1558994432]
- Language:
- English
- Call no.:
- M23500/537
- Type:
- Conference Proceedings
Similar Items:
MRS - Materials Research Society |
7
Conference Proceedings
An Ab Initio Two-Center Tight-Binding Approach to Simulations of Complex Materials Properties
MRS - Materials Research Society |
MRS - Materials Research Society |
8
Conference Proceedings
Theory of Electron Energy Loss Spectroscopy and its Application to Threading Edge Dislocations in GaN
Materials Research Society |
3
Conference Proceedings
Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVD
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS-Materials Research Society |
MRS - Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
MRS - Materials Research Society |
12
Conference Proceedings
Growth and Characterization of GaN and AlxGa1-xN Thin Films Achieved Via Lateral- and /or Pendeo-Epitaxial Overgrowth on 6H-SiC(0001) Substrates
MRS - Materials Research Society |