PE-CVD of F-Doped SiO2 Thin Films Using Tetraisocyanatesilane and Tetrafluorosilane

PE-CVD of F-Doped SiO2 Thin Films Using Tetraisocyanatesilane and Tetrafluorosilane

Author(s):

Publication title:

Low-dielectric constant materials II : symposium held December 2-3, 1996, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

443

Pub. Year:

1997

Page(from):

137

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993471 [1558993479]

Language:

English

Call no.:

M23500/443

Type:

Conference Proceedings

Details

TDL ID:	ZA00019838
Series ID:	PA00000011
Conf. info. (Name):	Symposium on low-dielectric constant materials
Conf. info. (Number):	2nd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1996.12.02-1996.12.03

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