Blank Cover Image

Electrical Characterization of Magnesium-Doped Gallium Nitride Grown by Metalorganic Vapor Phase Epitaxy

Author(s):
Publication title:
III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
423
Pub. Year:
1996
Page(from):
601
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993266 [1558993266]
Language:
English
Call no.:
M23500/423
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Intentional Defect Incorporation in Metalorganic Vapor Phase Epitaxy Indium Gallium Arsenide by Oxygen Doping

Huang, J. W., Kuech, T. F.

MRS - Materials Research Society
7 Conference Proceedings Electrical properties of oxygen doped GaN grown by metalorganic vapor phase epitaxy

Korotkov, R. Y., Wessels, B. W.

MRS-Materials Research Society
2 Conference Proceedings Carbon and Hydrogen-Induced Yellow Luminescence in Gallium Nitride Grown by Halide Vapor-Phase Epitaxy

Zhang, R., Kuech, T. F.

MRS - Materials Research Society
8 Conference Proceedings Gallium Nitride Thick Films Grown by Hydride Vapor Phase Epitaxy

Molnar, R. J., Maki, P., Aggarwal, R., Liau, Z. L., Brown, E. R., Melngailis, I., Gotz, W., Romano, L. T., Johnson, N. …

MRS - Materials Research Society
3 Conference Proceedings Reaction-Transport Models of the Metalorganic Vapor Phase Epitaxy of Gallium Nitride

Puwlosvski, R.P., Theodoropoulos, C., Salinger, A.G., Moffat, H.K., Mountziuris, T.J., Shadid, J.N., Thrush, E.J.

Electrochemical Society
9 Conference Proceedings Magnesium Doping of GaN by Metalorganic Chemical Vapor Deposition

Lu, Hongqiang, Bhat, Ishwara

MRS - Materials Research Society
4 Conference Proceedings High Resolution X-ray Diffraction Analysis of Gallium Nitride Grown on Sapphire by Halide Vapor Phase Epitaxy

Matyi, R. J., Zhi, D., Perkins, N. R., Horton, M. N., Kuech, T. F.

MRS - Materials Research Society
10 Conference Proceedings Photoluminescence and Photoluminescence Excitation Spectroscopy of In Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase Epitaxy

Kim. S., Li, X., Coleman, J. J., Zhang, R., Hansen, D. M., Kuech, T. F., Bishop, S. G.

MRS - Materials Research Society
5 Conference Proceedings N-rich GaNAs With High As Content Grown by Metalorganic Vapor Phase Epitaxy

Kimura, Akitaka, Tang, H.F., Paulson, C.A., Kuech, T.R

Materials Research Society
11 Conference Proceedings Crystal Growth and Electrical Characterization of InSbN Grown by Metalorganic Vapor Phase Epitaxy

Ishiguro, T., Kobori, Y., Nagawa, Y., Iwamura, Y., Yamaguchi, S.

Materials Research Society
6 Conference Proceedings Halide Vapor Phase Epitaxy of Gallium Nitride Films on Sapphire and Silicon Substrates

Perkins, N. R., Horton, M. N., Bandic, Z. Z., McGill, T. C., Kuech, T. F.

MRS - Materials Research Society
12 Conference Proceedings Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy

Shu,C.-K., Lee,W.-H., Pan,Y.-C., Huang,H.-Y., Chen,H.-H., Chen,W.-H., Chen,W.-K., Lee,M.-C.

SPIE - The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12