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Characterization of Deep Level Defects in 4H and 6H SiC Via DLTS, SIMS and MeV E-Beam Irradiation

Author(s):
Doyle, J. P.
Aboelfotoh, M. O.
Linnarsson, M. K.
Svensson, B. G.
Schoner, A.
Nordell, N.
Harris, C.
Lindstrom, J. L.
Janzen, E.
Hemmingsson, C.
5 more
Publication title:
III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
423
Pub. Year:
1996
Page(from):
519
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993266 [1558993266]
Language:
English
Call no.:
M23500/423
Type:
Conference Proceedings

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