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Effect of Si Doping on the Structure of GaN

Author(s):
Liliental-Weber, Zuzanna
Ruvimov, S.
Suski, T.
Ager, J. W., III
Swider, W.
Chen, Y.
Kisielowski, Ch.
Washburn, J.
Akasaki, I.
Amano, H.
Kuo, C.
Imler, W.
7 more
Publication title:
III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
423
Pub. date:
1996
Page(from):
487
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993266 [1558993266]
Language:
English
Call no.:
M23500/423
Type:
Conference Proceedings

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