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GaN Growth by Nitrogen ECR-CVD Method

Author(s):
Chen, K. H.
Chao, C. H.
Chuang, T. J.
Yang, Y. J.
Chen, L. C.
Chen, C. K.
Huang, Y. F.
Yang, C. H.
Lin, H. Y.
Chang, I. M.
Chen, Y. F.
6 more
Publication title:
III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
423
Pub. date:
1996
Page(from):
377
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993266 [1558993266]
Language:
English
Call no.:
M23500/423
Type:
Conference Proceedings

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