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Growth and Characterization of AlGaN/GaN Heterostructures with Multiple Quantum Wells by PAMBE

Author(s):
Shim, K. H.
Myoung, J. M.
Gluschenkov, O. V.
Kim, C.
Kim, K.
Yoo, M. C.
Kim, S.
Turnbull, D. A.
Bishop, S. G.
4 more
Publication title:
III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
423
Pub. Year:
1996
Page(from):
347
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993266 [1558993266]
Language:
English
Call no.:
M23500/423
Type:
Conference Proceedings

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