Lattice-Matched InAsN(X=0.38) on GaAs Grown by Molecular Beam Epitaxy

Lattice-Matched InAsN(X=0.38) on GaAs Grown by Molecular Beam Epitaxy

Author(s):

Kao, Y. C.

Publication title:

III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

423

Pub. Year:

1996

Page(from):

335

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993266 [1558993266]

Language:

English

Call no.:

M23500/423

Type:

Conference Proceedings

Details

TDL ID:	ZA00019836
Series ID:	PA00000011
Conf. info. (Name):	Symposium on III-nitride, SiC and diamond materials for electronic devices
Conf. info. (Number):	1996
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1996.04.08-1996.04.12

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