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Properties of Homoepitaxially MBE-Grown GaN

Author(s):
Suski, T.
Krueger, J.
Kisielowski, C.
Phatak, P.
Leung, M. S. H.
Liliental-Weber, Z.
Gassmann, A.
Newman, N.
Rubin, M. D.
Weber, E. R.
Grzegory, I.
Jun, J.
Bockowski, M.
Porowski, S.
Helava, H. I.
10 more
Publication title:
III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
423
Pub. Year:
1996
Page(from):
329
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993266 [1558993266]
Language:
English
Call no.:
M23500/423
Type:
Conference Proceedings

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