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TEM and PL Characterization of MBE-Grown Epitaxial GaN/GaAs

Author(s):
Xin, Yan
Brown, P. D.
Boothroyd, C. B.
Preston, A. R.
Humphreys, C. J.
Cheng, T. S.
Foxon, C. T.
Andrianov, A. V.
Orton, J. W.
4 more
Publication title:
III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
423
Pub. date:
1996
Page(from):
311
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993266 [1558993266]
Language:
English
Call no.:
M23500/423
Type:
Conference Proceedings

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