p- and n-Type Implantation Doping of GaN with Ca and O

p- and n-Type Implantation Doping of GaN with Ca and O

Author(s):

Publication title:

III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

423

Pub. Year:

1996

Page(from):

189

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993266 [1558993266]

Language:

English

Call no.:

M23500/423

Type:

Conference Proceedings

Details

TDL ID:	ZA00019836
Series ID:	PA00000011
Conf. info. (Name):	Symposium on III-nitride, SiC and diamond materials for electronic devices
Conf. info. (Number):	1996
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1996.04.08-1996.04.12

Similar Items:

1 Conference Proceedings Ion Implantation Doping and High Temperature Annealing of GaN Zolper, J. C., Crawford, M. Hagerott, Howard, A. J., Pearton, S. J., Abernathy, C. R., Vartuli, C. B., Yuan, C., Stall, … MRS - Materials Research Society	7 Conference Proceedings Ultrahigh Implant Activation Efficiency in GaN Using Novel High Temperature RTP System Cao, X. A., Abernathy, C. R., Singh, R. K., Pearton, S. J., Fu, M., Sarvepalli, V., Sekhar, J. A., Zolper, J. C., … MRS - Materials Research Society
2 Conference Proceedings Activation characteristics of donor and acceptor implants in GaN Cao, X. A., Pearton, S. J., Singh, R. K., Wilson, R. G., Sekhar, J. A., Zolper, J. C., Han, J., Rieger, D. J., Shul, R. … MRS-Materials Research Society	8 Conference Proceedings The Role of AlN Encapsulation of GaN During Implant Activation Annealing Zolper, J.C., Pearton, S.J., Rieger, D.J., Baca, A.G., Lee, J.W., Vartulli, C.R., Stall, R.A. Electrochemical Society
3 Conference Proceedings Repid Thermal Processing of Implanted GaN Up to 1500°C Cao, X. A., Pearton, S. J., Singh, R. K., Abernathy, C. R., Han, J., Shul, R. J., Rieger, D. J., Zolper, J. C., Wilson, … MRS - Materials Research Society	9 Conference Proceedings III-Nitride ion implantation and device processing Zolper, J.C., Shul, R.J., Baca, A.G., Pearton, S.J., Abernathy, C.R., Wilson, R.G., Stall, R.A., Shur, M. Electrochemical Society
4 Conference Proceedings Spectroscopy of Proton Implanted GaN Weinstein, M. G., Stavola, M., Song, C. Y., Bozdog, C., Przbylinska, H., Watkins, G. D., Pearton, S. J., Wilson, R. G. MRS - Materials Research Society	10 Conference Proceedings Status of Ion Implantation Doping and Isolation of III-V Nitrides Zolper, J.C., Pearton, S.J., Abernathy, C.R., Vartuli, C. B., Yuan, C., Stall, R.A. Electrochemical Society
5 Conference Proceedings Er-Doping of GaN and Related Alloys Pearton, S. J., Abernathy, C. R., MacKenzie, J. D., Schwartz, R. N., Wilson, R. G., Zavada, J. M., Shul, R. J. MRS - Materials Research Society	11 Conference Proceedings Properties of H, O and C in GaN Pearton, S. J., Abernathy, C. R., Lee, J. W., Vartuli, C. B., MacKenzie, J. D., Ren, F., Wilson, R. G., Zavada, J. M., … MRS - Materials Research Society
6 Conference Proceedings Ferromagnetic and Structural Properties of Mn-Implanted p-GaN Theodoropoulou, N., Hebard, A.F., Overberg, M.E., Abernathy, C.R., Pearton, S.J., Chu, S.N.G., Wilson, R.G. Materials Research Society	12 Conference Proceedings Recent Progress in Implantation and Annealing of GaN and AlGaN Zolper, J. C., Han, J., Deusen, S. B. Van, Crawford, M. H., Biefeld, R. M., Jun, J., Suski, T., Baranowski, J. M., … MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12