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Dry Etch Damage in InN, InGaN and InAlN

Author(s):
Pearton, S. J.
Lee, J. W.
MacKenzie, J. D.
Vartuli, C. B.
Donovan, S. M.
Abernathy, C. R.
Shul, R. J.
Ren, F.
Lothian, J. R.
4 more
Publication title:
III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
423
Pub. Year:
1996
Page(from):
163
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993266 [1558993266]
Language:
English
Call no.:
M23500/423
Type:
Conference Proceedings

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