Theoretical Prediction of Zinc Blende Phase GaN Avalanche Photodiode Performance Based on Numerically Calculated Electron and Hole Impact Ionization Rate Ratio

Theoretical Prediction of Zinc Blende Phase GaN Avalanche Photodiode Performance Based on Numerically Calculated Electron and Hole Impact Ionization Rate Ratio

Author(s):

Publication title:

III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

423

Pub. Year:

1996

Page(from):

45

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993266 [1558993266]

Language:

English

Call no.:

M23500/423

Type:

Conference Proceedings

Details

TDL ID:	ZA00019836
Series ID:	PA00000011
Conf. info. (Name):	Symposium on III-nitride, SiC and diamond materials for electronic devices
Conf. info. (Number):	1996
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1996.04.08-1996.04.12

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