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In Situ Analysis of the Formation of Thin TiSi2 (<50 nm) Contacts in Submicron CMOS Structures During Rapid Thermal Annealing

Author(s):
Clevenger, L. A.
Cabral, C., Jr
Roy, R. A.
Lavoie, C.
Viswanathan, R.
Saenger, K. L.
Jordan-Sweet, J.
Morales, G.
Ludwig, K. L., Jr
Stephenson, G. B.
5 more
Publication title:
Silicide thin films - fabrication, properties, and applications : Symposium held November 27-30, 1995, Boston, Massachusetts, USA
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
402
Pub. date:
1996
Page(from):
257
Pub. info.:
Pittsburgh: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993051 [1558993053]
Language:
English
Call no.:
M23500/402
Type:
Conference Proceedings

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