Blank Cover Image

Electrical characteristics of n-and p-MOSFETs with N2O-reoxidized NH3-nitrided N2O oxides as gate dielectrics

Author(s):
Han,L.K. ( Univ.of Texas/Austin )
Wang,H.
Yan,J.
Kim,J.H.
Yoon,G.W.
Kwong,D.-L.
1 more
Publication title:
Microelectronic Device and Multilevel Interconnection Technology
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
2636
Pub. Year:
1995
Page(from):
208
Page(to):
217
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819420022 [0819420026]
Language:
English
Call no.:
P63600/2636
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings High Quality Oxynitride Gate Dielectrics Prepared by Reoxidation of NH3-Nitrided SiO2 and N2O-Oxide in N2O Ambient

Han, L.K., Kim, J., Wang, H.H., Yan, J., Kwong, D.L.

Electrochemical Society
7 Conference Proceedings Oxide/nitride stacked layers prepared by in situ rapid-thermal multiprocessing

Wang,H.H., Han,L.K., Yan,J., Kwong,D.-L.

SPIE-The International Society for Optical Engineering
2 Conference Proceedings Process Dependence of MOSFET Performance and Reliability with N2O-Based Furnace-Grown Gate Oxides

Han, L.K, Wang, H.H., Yoon, G.W., Allman, D., Kwong, D.L.

Electrochemical Society
8 Conference Proceedings In-situ Rapid Thermal N20 Oxidation of NH3-Nitrided Si for Ultrathin Nitride/Oxide Stack Gate Formation

Kim, Y.H., Song, S.C., Luan, H.F., Gelpey, J.C., Kepton, A., Levy, S., Bloom, R., Kwong, D.-L.

Electrochemical Society
3 Conference Proceedings Improved hot-carrier reliability of MOSFET analog performance with NO-nitrided SiO2 gate dielectrics

Han,L.K., Kwong,D.

SPIE-The International Society for Optical Engineering
9 Conference Proceedings Highly reliable CVD-stacked oxynitride gate dielectric fabricated by in-situ rapid thermal multiprocessing

Yan,J., Han,L.K., Kwong,D.-L.

SPIE-The International Society for Optical Engineering
4 Conference Proceedings N2O-Based Gate Dielectrics for ULSI Applications

Kim, J., Yoon, G.W., Lo, G.Q., Ahn, J., Kwong, D.L.

Electrochemical Society
10 Conference Proceedings Formation of High Quality Thin Stacked Oxynitride Gate Dielectrics by In-Situ Rapid Thermal Multiprocessing

Bhat, M., Cho, T.H., Yan, J., Han, L.K., Kwong, D.L.

Electrochemical Society
5 Conference Proceedings Recent Developments In Ultrathin Oxynitride And Oxide/Nitride Stacked Films Prepared By In-Situ RTP Multiprocessing

Bhat, M., Yoon, G.W., Kim, J., Han, L,K., Yan, J., Wristers, D., Kwong, D.L.

Electrochemical Society
11 Conference Proceedings A COMPARISON OF THE ELECTRICAL PROPERTIES OF RTP FORMED GATE OXIDES, REOXIDIZED-NITRIDED OXIDES AND NITROUS OXIDE BASED GATE DIELECTRICS

Meinecke, R. J., Wasserman, Y.

Materials Research Society
6 Conference Proceedings ELECTRICAL CHARACTERISTICS OF ULTRATHIN STACKED NITRIDE/OXIDE GATE DIELECTRICS PREPARED BY RAPID THERMAL PROCESSING

Ting, W., Ahn, J., Kwong, D. L.

Materials Research Society
12 Conference Proceedings Electrical Properties of Atomic-Layer-Deposited La2O3/Thermal-Nitrided SiO2 Stacking Dielectric on 4H-SiC(0001)

J.H. Moon, K.Y. Cheong, D.I. Eom, H.K. Song, J.H. Yim, J.H. Lee, H.J. Na, W. Bahng, N.K. Kim, H.J. Kim

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12