Ab-initio investigations on diffusion of halogen atoms in GaAs

Author(s):

• Ohno,T.
• Sasaki,T.
• Taguchi,A.

Publication title:

Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997

Title of ser.:

Materials science forum

Ser. no.:

258-263

Pub. Year:

1997

Vol.:

Part3

Page(from):

1821

Page(to):

1826

Pub. info.:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497898 [0878497897]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings