Er diffusion and Er-induced Ga-AI interdiffusion in GaAs/AlGaAs quantum structures
- Author(s):
Bresler,M.S. Ber,B.Ya. Gusev,O.B. Lindmark,E.K. Prineas,J.P. Gibbs,H.M. Khitrova,G. Masterov,V.F. Yassievich,I.N. Zakharchenya,B.P. - Publication title:
- Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
- Title of ser.:
- Materials science forum
- Ser. no.:
- 258-263
- Pub. Year:
- 1997
- Vol.:
- Part3
- Page(from):
- 1701
- Page(to):
- 1706
- Pub. info.:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497898 [0878497897]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
Trans Tech Publications |
8
Conference Proceedings
Excitation mechanism of Er photoluminescence in bulk Si and SiO2 with nanocrystals
Kluwer Academic Publishers |
3
Conference Proceedings
Photo- and Electroluminescence Study of Excitation Mechanism of Er Luminescence in a-Si:H(Er)
MRS - Materials Research Society |
Kluwer Academic Publishers |
Trans Tech Publications |
Materials Research Society |
5
Conference Proceedings
Electroluminescence and excitation mechanism of erbium ions in erbium-doped crystalline silicon
SPIE-The International Society for Optical Engineering |
Trans Tech Publications |
6
Conference Proceedings
Room-temperature photoluminescence of erbium-doped amorphous hydrogenated silicon
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |