ENVIRONMENTAL EFFECT IN DX(Te)CENTERS IN GaAlAs.

ENVIRONMENTAL EFFECT IN DX(Te)CENTERS IN GaAlAs.

Author(s):

Publication title:

Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986

Title of ser.:

Materials science forum

Ser. no.:

10-12

Pub. Year:

1986

Vol.:

Part1

Page(from):

399

Page(to):

404

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878495511 [0878495517]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00019743
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Defects in Semiconductors - ICDS
Conf. info. (Number):	14th
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	1986.08.18-1986.08.22

Similar Items:

1 Conference Proceedings DX-like centres in semiconductors:metastability,bistability and negative-U Dobaczewski,L, Langer,JM Trans Tech Publications	7 Conference Proceedings Studies of deep level transient spectroscopy of DX centers of GaAlAs:Te under uniaxial stress Li,M.-F., Yu,P.Y., Weber,E.R., Bauser,E., Hansen,W.L., Haller,E.E. Trans Tech Publications
2 Conference Proceedings Persistent Photoluminescence of DX-Centers in Gal-xAlxAs:Si Jantsch,W., Brunthaler,G., Ploog,K., Dmochowski,J.E., Langer,J.M. Trans Tech Publications	8 Conference Proceedings Trends in the Metastability of DX-Centers Schmidt,T.M., Fazzio,A., Caldas,M.J. Trans Tech Publications
3 Conference Proceedings Static and Dynamic Absorption Measurements of the DX Center in AlxGa1-xAs Kaczor,P., Zyikiewicz,Z.R., Dobaczewski,L., Godlewski,M., Mandray,A., Huant,S., Portal,J.-C. Trans Tech Publications	9 Conference Proceedings TRAPPING CHARACTERISTICS AND ANALYSIS OF Te-RELATED DX CENTERS IN AlGaAs and GaAsP. MUNOZ,E., GOMEZ,A., CALLEJA,F., CRIADO,J.J., HERRERO,J.M., SANDOVAL,F. Trans Tech Publications
4 Conference Proceedings Coexistence of deep and shallow paramagnetic excited states of the DX center in GaAlAs Bardeleben,H.J.von, Sheinkmann,M., Delerue,C., Lannoo,M. Trans Tech Publications	10 Conference Proceedings EFFECT OF THE HOST BAND STRUCTURE ON CAPTURE AND EMISSION PROCESSES AT DX CENTERS IN AlGaAs. MOONEY,P.M., CALLEJA,E., WRIGHT,S.L., HEIBLUM,M. Trans Tech Publications
5 Conference Proceedings Laplace transform DLTS studies of the DX centers in GaSb and AlGaAs Dobaczewski,L., Hawkins,I.D., Kaczor,P., Missous,M., Poole,I., Peaker,A.R. Trans Tech Publications	11 Conference Proceedings Ionization Energies of Rare Earth Impurities in III-V and II-VI Semiconductor Compounds Langer,J.M. Trans Tech Publications
6 Conference Proceedings MANIFESTATION OF THE DX CENTRE IN HEAVILY δ-DOPED GaAs(Si) Arscott, S., Missous, M., Dobaczewski, L., Harness, P.C., Maude, D.K., Portal, J.C. Materials Research Society	12 Conference Proceedings ELECTRIC FIELD ENHANCEMENT OF ELECTRON EMISSION FROM DX CENTERS AND CONSEQUENCES Bourgoin, J.C., Zazoui, M., Feng, S.L., von Bardeleben, H.J., Alaya, S., Maaref, H. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12