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CHARACTERIZATION OF VACANCY DEFECTS IN As-GROWN AND ELECTRON IRRADIATED GaAs BY POSITRON ANNIHILATION.

Author(s):
Publication title:
Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986
Title of ser.:
Materials science forum
Ser. no.:
10-12
Pub. date:
1986
Vol.:
Part1
Page(from):
265
Page(to):
270
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878495511 [0878495517]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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