SELF-CONSISTENT TIGHT BINDING THEORY OF TRENDS FOR SUBSTITUTIONAL TRANSITION METAL IONS IN Si AND GaAs.

Author(s):

• DELERUE,C.
• ALLAN,G.
• LANNOO,M.

Publication title:

Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986

Title of ser.:

Materials science forum

Ser. no.:

10-12

Pub. Year:

1986

Vol.:

Part1

Page(from):

37

Page(to):

42

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878495511 [0878495517]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings