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Phosphorous-outgassing-induced threshold voltage in p-channel power MOSFET devices

Author(s):
Lin,F. ( Motorola )
De Souza,R. ( Motorola )
Dynes,R. ( Motorola )
Lu,S. ( Chemical and Surface Analytical Labs. )
Schay,P. ( Motorola )
Grizzard,L. ( Motorola )
Plutino,T. ( Motorola )
Welches,D. ( Motorola )
3 more
Publication title:
In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II :23-24 September 1998 Santa Clara, California
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3509
Pub. date:
1998
Page(from):
154
Page(to):
161
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780081942963 [0081942968]
Language:
English
Call no.:
P63600/3509
Type:
Conference Proceedings

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